GA21型氧化硅基底单层石墨烯(10mmX10mm)X4片 氧化硅基底单层石墨烯膜 CVD SiO2/Si基底单层石墨烯薄膜

描述：                                                                                             

● 光透过率：> 97%

● 覆盖率：> 95%

● 厚度：0.345 nm

● 氧化铝基底FET电子迁移率：2000 cm²/Vs

● 300nm氧化硅/硅基底霍尔电子迁移率：4000 cm²/Vs

● 方阻：450±40 Ω／□

● 晶粒尺寸：达到10μm                                                                                   

● GA21型CVD氧化硅基底单层石墨烯薄膜的尺寸：(10mmX10mm)X4片。

● 有特殊要求的用户可订制。

SiO2/Si基底规格：

● 氧化硅厚度：300nm±5%

● 晶型/掺杂剂：P型/B

● 晶向：<100>

● 电阻率：<0.005 Ω-cm

● 晶片厚度：525μm±20μm

● 上表面：抛光

● 背表面：腐蚀

● 粒子：<10@0.3μm

Monolayer Graphene produced by CVD on copper catalyst and transferred to a SiO2/Si substrate using wet transfer process.

应用领域：

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and Bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

● GA21型氧化硅基底单层石墨烯的拉曼光谱：